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首页 >>> NEC => Renesas Technology >>> 2SC5606 数据手册

2SC5606 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SC5606 Datasheet PDF NEC => Renesas Technology

零件编号
2SC5606

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7 Pages

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56.5 kB

生产厂家
NEC
NEC => Renesas Technology NEC

 

零件编号
产品描述 (功能)
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生产厂家
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Laboratories.
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
Renesas Electronics
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Electronics
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
Renesas Electronics
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics

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