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AM80610-030 数据手册 ( 数据表 )

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DESCRIPTION
The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.
AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.
The AM80610-030 is provided in the industry standard, metal/ceramic AMPAC hermetic package.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ INPUT/OUTPUT MATCHING
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 30 W MIN. WITH 8.5 dB GAIN

 

零件编号
产品描述 (功能)
PDF
生产厂家
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
Advanced Power Technology

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