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BF1101WR 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
BF1101WR N-channel dual-gate MOS-FETs Philips
Philips Electronics Philips
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DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high
   forward transfer admittance to input
   capacitance ratio
• Low noise gain controlled amplifier
   up to 1 GHz
• Partly internal self-biasing circuit to
   ensure good cross-modulation
   performance during AGC and good
   DC stabilization.
  
APPLICATIONS
• VHF and UHF applications with
   3 to 7 V supply voltage, such as
   television tuners and professional
   communications equipment.

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