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BF1105WR 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
BF1105WR N-channel dual-gate MOS-FETs Philips
Philips Electronics Philips
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DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.

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