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CPD80 数据手册 ( 数据表 ) - Central-Semiconductor

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PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 16 x 16 MILS
   Die Thickness 9.0 MILS
   Anode Bonding Pad Area 6.5 x 6.5 MILS
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 18,000Å

 

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