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CPD83V 数据手册 ( 数据表 ) - Central-Semiconductor

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  2005  
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CPD83V image

PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 11 x 11 MILS
   Die Thickness 7.1 MILS
   Anode Bonding Pad Area 3.35 x 3.35 MILS
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au-As - 13,000Å

 

零件编号
产品描述 (功能)
PDF
生产厂家
HIGH-SPEED SWITCHING USENch POWER MOSFET HIGH-SPEED SWITCHING USE
Mitsumi
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
MITSUBISHI ELECTRIC
On-Chip EPROM Microcomputer 4-Bit Single Chip Microprocessor with LCD Driver, 12 Kbytes of EPROM and 1 Kbit of RAM On-Chip
SANYO -> Panasonic
Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer
SANYO -> Panasonic
Four-Bit Single-Chip Microcontroller with On-Chip LCD Drivers for Small-Scale Control in Medium-Speed Applications
SANYO -> Panasonic
MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
Semelab - > TT Electronics plc
High-speed, 16-bit High-speed Advanced Adder
Nippon Precision Circuits
Chip Inductor (Chip Coil) for High Frequency Vertical Wire Wound
Murata Manufacturing
Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
Unspecified
Chip Inductor (Chip Coil)for High Frequency Film Type
Murata Manufacturing

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