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HZS11LA1 数据手册 ( 数据表 ) - Renesas

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Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
• Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.

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零件编号
产品描述 (功能)
PDF
生产厂家
Silicon Epitaxial Planar Zener Diode for Low Noise Application
Hitachi -> Renesas Electronics
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
Hitachi -> Renesas Electronics
500mW low noise silicon zener diode. Nominal zener voltage 56V.
Jinan Gude Electronic Device
DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL PLANAR TYPE
Unspecified
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL PLANAR TYPE
Isahaya Electronics
LOW LEVEL ZENER DIODES LOW CURRENT: 250µA - LOW NOISE
Knox Semiconductor, Inc
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
Knox Semiconductor, Inc
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
Knox Semiconductor, Inc
SILICON PLANAR LOW NOISE ZENER DIODES
Semtech Electronics LTD.

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