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IM29LV001B 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
IM29LV001B 1 M Bit (128K x 8) 3.3V-Only Flash Memory ETC1
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[Integrated Memory Technologies, Inc.]

General Descriptions
The IM29LV001T/B is a 1 Mega-bit, 5V-only page erasable flash memory organized as 128K X 8 bits.It is manufactured with IMT’s proprietary double metal, 0.40 µm CMOS flash technology. High performance cell design and advanced process technology attain better reliability, manufacturability, circuit performance and future scaleability than other alternative approaches. Fast, self-timed program/erase operations are made possible with an innovative cell and array architecture which is free from the over-erase problem of the traditional stacked-gate structures.

Features:
● 0.40 µm, triple-poly double-metal CMOS process
● Single power supply operation
    3.3V ± 10% for both read and write
● High endurance
    > 10,000 program/erase cycles
● Fast read access time
    70 and 90 ns
● Single page erasability for optimal data alterability
    Page size: 512 bytes
● Hardwired data protection
    Inhibits program and erase operations of the top (IM29LV001T) or bottom (IM29LV001B) 32 pages of the array for false write and virus prevention.
● Flexible boot block configurability
● Fast program and erase operations:
    Byte program : < 35 µsec typical
    Page erase : < 7 msec typical
    Chip erase : < 2 sec typical
● Self-timed program/erase operations with end-of-cycle detection
    Data# Polling and Toggle Bit
● Inadvertent write protection
    Glitch filtering for WE# and CE#
    Low Vcc (< 2.2 V ) write inhibit
    Hardwired data protection
● Low Icc for power conservation
    Read: 6 ma typical
    Write: 10 ma typical
    Stand-by: 10 µA typical
● Compatible with JEDEC byte wide pinout and single-supply flash command standards
● Package types:
    32-pin PLCC, TSOP and PDIP
    Others available upon request

 

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