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IRF820 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
IRF820 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET Intersil
Intersil Intersil
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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17405.

Features
• 2.5A, 500V
• rDS(ON) = 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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零件编号产品描述 (功能)PDF生产厂家
BUZ41A 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET 视图 Harris Semiconductor
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IRF450 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET 视图 Fairchild Semiconductor
FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET 视图 Fairchild Semiconductor
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47217-000 Discrete Crimp-to-Wire Pins/Receptacles/Housings 视图 Unspecified
FDH15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET 视图 Fairchild Semiconductor
2SK3233 N-channel MOSFET high speed power switching, 500V, 5A 视图 Hitachi -> Renesas Electronics
IRFD320 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET 视图 Fairchild Semiconductor
IRF440 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package 视图 Fairchild Semiconductor

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