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IRL1104LPBF 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
IRL1104LPBF HEXFET® Power MOSFET IR
International Rectifier IR
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IRL1104SPBF image

VDSS = 40V
RDS(on) = 0.008Ω
ID = 104A…

Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

● Advanced Process Technology
● Surface Mount (IRL1104S)
● Low-profile through-hole (IRL1104L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Logic-Level Gate Drive

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