Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
首页 >>> ST-Microelectronics >>> M27128A-2F6 数据手册

M27128A-2F6 数据手册 ( 数据表 )

零件编号
产品描述 (功能)
生产厂家
M27128A-2F6
ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF
  not available.
PDF
DOWNLOAD     
M27128A-2F6 image

DESCRIPTION
The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V

Page Link's: 1  2  3  4  5  6  7  8  9  10 
 

零件编号
产品描述 (功能)
PDF
生产厂家
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM
NTE Electronics
Advanced 128K 16K x 8 UV EPROM
Intel
Integrated Circuit NMOS, 16K UV Erasable PROM
NTE Electronics
Integrated Circuit NMOS, 8K UV EPROM, 450ns
NTE Electronics
UV Enhanced Photo Detectors
Microsemi Corporation
NMOS 256 Kbit (32Kb x 8) UV EPROM
STMicroelectronics
Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
NTE Electronics
16K (2K x 8) UV ERASABLE PROM
Intel
Integrated Circuit NMOS, 64K Erasable EPROM, 200ns
NTE Electronics
Nonvolatile Read/Write Cartridge
Dallas Semiconductor -> Maxim Integrated

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]