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M27128A-2F6 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
M27128A-2F6 NMOS 128K (16K x 8) UV EPROM ST-Microelectronics
STMicroelectronics ST-Microelectronics
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M27128AF6 image

DESCRIPTION
The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V

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与其他制造商的搜索 'M27128A-2F6'

零件编号产品描述 (功能)PDF生产厂家
NTE21128 Integrated Circuit NMOS, 128K (16K x 8) UV EPROM 视图 NTE Electronics
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NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns 视图 NTE Electronics
M27256 NMOS 256 Kbit (32Kb x 8) UV EPROM 视图 STMicroelectronics
NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM 视图 NTE Electronics
M2716 16K (2K x 8) UV ERASABLE PROM 视图 Intel
NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns 视图 NTE Electronics
DS1217 Nonvolatile Read/Write Cartridge 视图 Dallas Semiconductor -> Maxim Integrated
HN27C256H 256K (32K x 8-bit) UV and OTP EPROM 视图 Hitachi -> Renesas Electronics

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