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MGFC38V6472 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
MGFC38V6472 6.4 ~ 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
Other PDF  2011  
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MGFC38V6472 image

DESCRIPTION
The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
● Class A operation
● Internally matched to 50Ω system
● High output power
    P1dB = 6W (TYP) @ 6.4 – 7.2 GHz
● High power gain
    GLP = 9 dB (TYP) @ 6.4 – 7.2 GHz
● High power added efficiency
    P.A.E.=31% (TYP) @ 6.4 – 7.2 GHz, P1dB
● Low distortion [Item: -51]
    IM3 = -45 dBc (TYP) @Po = 27 (dBm) S.C.L.

APPLICATION
● item 01 : 6.4 – 7.2 GHz band power amplifier
● item 51 : Digital radio communication

 

与其他制造商的搜索 'MGFC38V6472'

零件编号产品描述 (功能)PDF生产厂家
MGFC38V6472 C band internally matched power GaAs FET 视图 Mitsumi
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