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MJ11029G-2005 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
MJ11029G High−Current Complementary Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
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High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*

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