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MTB33N10E 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
MTB33N10E TMOS E-FET™ High Energy Power FET Motorola
Motorola => Freescale Motorola
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TMOS E-FET™ High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS

This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
  Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

 

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与其他制造商的搜索 'MTB33N10E'

零件编号产品描述 (功能)PDF生产厂家
MTP10N35 TMOS POWER FET 10 AMPERES RDS(on) = 0.55 OHMS 350 AND 400 VOLTS 视图 New Jersey Semiconductor
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MRF171 TMOS RF FET N-Channel Enhancement Mode 视图 Advanced Semiconductor
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