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MTB33N10E 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
MTB33N10E TMOS E-FET™ High Energy Power FET Motorola
Motorola => Freescale Motorola
Other PDF  not available.
MTB33N10E image

TMOS E-FET™ High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate

This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
  Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode


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