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NCV8440-2009 数据手册 ( 数据表 )

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NCV8440
ON-Semiconductor
ON Semiconductor ON-Semiconductor
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NCV8440 image

Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection

Features
• Diode Clamp Between Gate and Source
• ESD Protection − HBM 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices

Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation

Applications
• Automotive and Industrial Markets:
   Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring Site
   and Control Changes

 

零件编号
产品描述 (功能)
PDF
生产厂家
FULLY PROTECTED POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
N-CHANNEL 700V - 1 Ohm - 7.5A / Zener-Protected SuperMESH Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET
STMicroelectronics
N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET
STMicroelectronics

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