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PD8042 数据手册 ( 数据表 ) - Mitsubishi

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DESCRIPTION
PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50μm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm. This photodiode features high-speed response and a high responsivity, and is suitable for the light receiving elements for optical fiber communication systems.

Feature
● φ50μm active diameter
● 1000~1600nm wavelength band
● Small dark current
● Low noise
● High responsivity

APPLICATION
    Receiver for optical communication system

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零件编号
产品描述 (功能)
PDF
生产厂家
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL
Optoway Technology
Mini-Size InGaAs PIN PD MODULE InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL
Optoway Technology
1000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
ø 30 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
California Eastern Laboratories.
ø 80 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
California Eastern Laboratories.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Renesas Electronics

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