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RJU6053TDPP-EJ 数据手册 ( 数据表 ) - Renesas

零件编号
产品描述 (功能)
生产厂家
RJU6053TDPP-EJ
Renesas
Renesas Electronics Renesas
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Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/μs)
• Low forward voltage: VF = 2.5 V typ. (at IF = 20 A)
• Low reverse current: IR = 1 μA max. (at VR = 600 V)

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零件编号
产品描述 (功能)
PDF
生产厂家
30Amperes,300Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
60Amperes,200Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
30Amperes,600Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
60Amperes,400Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
60Amperes,600Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
15Amperes,600Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
30Amperes,400Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
30Amperes,200Volts Single Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
30Amperes,600Volts Single Insulated Package Ultra Fast Recovery Epitaxial Diode
Thinki Semiconductor Co., Ltd.
Ultra Fast, High Power Rectifier Fast Recovery Series
Unspecified

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