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STP13N60M2 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
STP13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF  not available.
STW13N60M2 image

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected

• Switching applications

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与其他制造商的搜索 'STP13N60M2'

零件编号产品描述 (功能)PDF生产厂家
STD3NM60 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET 视图 STMicroelectronics
HFA16PB120 Ultrafast, Soft Recovery Diode (VR= 1200V VF(typ.)* = 2.3V IF(AV)= 16A Qrr(typ.)= 260nC IRRM(typ.) = 5.8A trr(typ.) = 30ns di(rec)M/dt (typ.)* = 76A/µs) 视图 International Rectifier
STD12NF06 N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET 视图 STMicroelectronics
STP12NK80Z N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET 视图 New Jersey Semiconductor
OM50N05SA 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages 视图 Omnirel Corp => IRF
ICS9250-11 Frequency Timing Generator for PENTIUM II/III™ Systems 视图 Integrated Circuit Systems
B11NM60 N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET 视图 Unspecified
P16NF06 N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET 视图 Unspecified
BYP35A05 High-temperature diodes 视图 Diotec Semiconductor Germany
SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 视图 Infineon Technologies

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