Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
首页 >>> Simtek >>> U630H16XS 数据手册

U630H16XS 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
U630H16XS HardStore 2K x 8 nvSRAM Die Simtek
Simtek Corporation Simtek
Other PDF  not available.
PDF DOWNLOAD     
U630H16XS image

Description
The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.
The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pad. The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity.
Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed.
Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells.
The RECALL operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times.
The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are marked with a number sign (#).

Features
• High-performance CMOS nonvolatile static RAM 2048 x 8 bits
• 25, 35 and 45 ns Access Times
• 12, 20 and 25 ns Output Enable Access Times
• Hardware STORE Initiation
   (STORE Cycle Time < 10 ms)
• Automatic STORE Timing
• 106 STORE cycles to EEPROM
• 100 years data retention in EEPROM
• Automatic RECALL on Power Up
• Hardware RECALL Initiation
   (RECALL Cycle Time < 20 μs)
• Unlimited RECALL cycles from EEPROM
• Unlimited SRAM Read and Write
• Single 5 V ± 10 % Operation
• Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
• QS 90000 Quality Standard
• ESD protection > 2000 V
   (MIL STD 883C M3015.7-HBM)

 

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16 
 

与其他制造商的搜索 'U630H16XS'

零件编号产品描述 (功能)PDF生产厂家
U630H16 HardStore 2K x 8 nvSRAM 视图 Zentrum Mikroelektronik Dresden AG
U630H64 HardStore 8K x 8 nvSRAM 视图 Zentrum Mikroelektronik Dresden AG
HX-R-BNC 75 BNC Cable Connector 视图 Unspecified
80C35 CMOS 8-Bit Microcontroller 视图 Oki Electric Industry
U635H16 PowerStore 2K x 8 nvSRAM 视图 Zentrum Mikroelektronik Dresden AG
SN54HC08-DIE RAD-TOLERANT SPACE GRADE DIE, QUADRUPLE 2-INPUT POSITIVE-AND GATES 视图 Texas Instruments
SN54HC273-DIE RAD-TOLERANT SPACE GRADE DIE, QUADRUPLE 2-INPUT POSITIVE-AND GATES 视图 Texas Instruments
SN54HC08-DIE RAD-TOLERANT SPACE GRADE DIE, QUADRUPLE 2-INPUT POSITIVE-AND GATES 视图 Texas Instruments
STK22C48 16 Kbit (2K x 8) AutoStore nvSRAM 视图 Cypress Semiconductor
SN54HC191-DIE SN54HC191-DIE 4-Bit Synchronous Up/Down Binary Counter 视图 Texas Instruments

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]