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U632H16 数据手册 ( 数据表 )

零件编号产品描述 (功能)生产厂家
U632H16 PowerStore 2K x 8 nvSRAM Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum
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U632H16BSK25 image

Description
The U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.
The U632H16 is a fast s tatic RAM (25, 35, 45 ns), w ith a nonvolatile electr ically erasable PROM (EEPROM) element incorporated n each static memory cell. The SRAM can be read and wri tten an unlimited number of ti mes, while ndependent nonvolatile data resides in EEPROM. Data transfers rom the SRAM to the EEPROM (the STORE operation) take place automatically upon power down using charge stored in an external 100 µF capacitor. Transfers from he EEPROM to the SRAM (the RECALL operation) take place automatically on power up. The U632H16 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity.

Features
❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits
❐ 25, 35 and 45 ns Access Times
❐ 12, 20 and 25 ns Output Enable Access Times
❐ ICC = 15 mA at 200 ns Cycle Time
❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor
❐ Hardware or Software initiated STORE
   (STORE Cycle Time < 10 ms)
❐ Automatic STORE Timing
❐ 105 STORE cycles to EEPROM
❐ 10 years data retention in EEPROM
❐ Automatic RECALL on Power Up
❐ Software RECALL I nitiation
   (RECALL Cycle Time < 20µs)
❐ Unlimited RECALL cycles from EEPROM
❐ Single 5 V± 10 % Operation
❐ Operating temperature ranges:
   0 to 70 °C
   -40 to 85 °C
❐ CECC 90000 Quality Standard
❐ ESD characterization according MIL STD 883C M3015.7-HBM
   (classific ation see IC Code Numbers)
❐ Packages: PDIP28 (300 mil)
                 PDIP28 (600 mi)
                 SOP28 (300 mil)

 

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