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产品描述 (功能) : AC INPUT HARMONIC ATTENUATOR MODULE

Features
• Unity power factory
• Safety agency approvals: UL478, 544, 1950; CSA22.2 No. 234; EN60950
• Meets EN61000-3-2 for line current harmonic content
• Universal input: 85–264VAC: 50/60Hz
• Input surge current limiting
• 90–94% efficiency (typical)
• UL, CSA, TUV, CE, C-Tick

产品描述 (功能) : 3-Band mixer/oscillator and PLL for terrestrial tuners

GENERAL DESCRIPTION
This device is a programmable 3-Band mixer oscillator and synthesizer intended for LOW, MID and HIGH Band TV and VCR tuners. It has three double balanced mixers and three oscillators for the LOW, MID and HIGH Band respectively, a PLL synthesizer, and an IF amplifier. There are four package variants: TDA6508, TDA6509, TDA6508A and TDA6509A. Versions TDA6508; TDA6509 have a symmetrical IF amplifier; versions TDA6508A; TDA6509A have an asymmetrical IF amplifier, (see Fig.1).
The common output of all three mixers can be connected, via two output pins, to an external IF filter to enable shunted IF Bandpass and/or serial filtering for improved signal handling. Two input pins are available for connecting the output of the external filter to the input of the IF amplifier. The mixer output has an impedance of 300 Ω. The IF amplifier input has an impedance of 2.5 kΩ (5 pF).
The overall gain of the tuner can be increased at low signal amplitude conditions to improve TV reception by activating a weak signal booster via the I2C-bus.
There are five open-drain PMOS output ports; each port has a different drive capability. I2C-bus bit P0 enables port P0 (20 mA drain current) and the LOW Band mixer oscillator. Bit P1 enables port P1 (20 mA drain current) and the MID Band mixer oscillator. When ports P0 and P1 are both disabled, the HIGH Band mixer oscillator is enabled. Bit P2 enables port P2 (20 mA drain current). Bit P3 enables port P3 (5 mA drain current) for general use, and bit P4 enables port P4 (5 mA drain current) for general use, and is also combined with the ADC input. When the ports are used, the sum of the drain currents must be limited to 30 mA.

FEATURES
• Single-chip 5 V mixer / oscillator and synthesizer for TV,
   VCR tuners, DVD-R and PC TV.
• I2C bus protocol compatible with 3.3 V and 5 V
   microcontrollers
   – Address with 4 data bytes transmission (I2C-bus
      ‘write’ mode)
   – Address with 1 status byte (I2C-bus ‘read’ mode)
   – 4 independent I2C-bus addresses.
• 5 Positive-channel Metal Oxide Semiconductor (PMOS)
   output ports
   – 3 buffers for Band selection (20 mA)
   – 2 buffers for general purpose, e.g. FM sound trap
      (5 mA).
• 33 V tuning voltage output
• In-lock flag
• 5-step analog-to-digital converter (3 bits in I2C-bus
   mode)
• 15-bit programmable divider
• Programmable reference divider ratio (64, 80 or 128)
• Programmable charge-pump current (20 or 100 µA)
• Balanced mixer with a common emitter input for LOW
   Band (single input)
• Balanced mixer with a common emitter input for MID
   Band (balanced input)
• Balanced mixer with a common base input for HIGH
   Band (balanced input)
• 2-pin asymmetrical oscillator for LOW Band
• 2-pin symmetrical oscillator for MID Band
• 2-pin symmetrical oscillator for HIGH Band
• External 4-pin IF filter between mixer output (medium
   impedance) and IF amplifier input (high impedance)
• Weak signal booster (I2C controlled switchable gain
   amplifier)
• Low power
• Low radiation
• Small size
• TDA6508; TDA6509: symmetrical IF amplifier output to
   drive a SAW filter (1.25 kΩ)
• TDA6508A; TDA6509A: single-ended IF amplifier to
   drive low ohmic load (75 Ω).

APPLICATIONS
• 3-Band tuner for terrestrial TV, DVD-R, VCR and PC TV.

零件编号(s) : TDA5731M/C1 TDA5731M
Philips
Philips Electronics
产品描述 (功能) : Low power VHF, UHF and hyperBand mixer/oscillator for TV and VCR 3-Band tuners

GENERAL DESCRIPTION
The TDA5731M is a monolithic integrated circuit that performs the Band A, Band B and Band C mixer/oscillator functions in TV and VCR tuners. This low power mixer/oscillator circuit requires a power supply of 5 V and is available in a very small package outline. This device gives the designer the capability to design an economical and physically small 3-Band tuner. The tuner development time can be drastically reduced by using this device.

FEATURES
• Balanced mixer with a common emitter input for Band A (single input)
• 2-pin oscillator for Bands A and B
• 3-pin oscillator for Band C
• Balanced mixer with a common base input for Band B and C (balanced input)
• Local oscillator buffer output for external synthesizer
• SAW filter preamplifier with a low output impedance to drive the SAW filter directly
• Electronic Band switch.

APPLICATIONS
• 3-Band TV tuners
• 3-Band TV front-ends
• 3-Band VCR tuners
• 3-Band VCR front-ends.

AVAGO
Avago Technologies
产品描述 (功能) : 4x5 UMTS Band I & Band V Dual-Band Power Amplifi er Module with Integrated Coupler

Description
The ACPM-5251 is the dual-Band power amplifier module with integrated directional coupler designed for UMTS Band 1 and Band 5 uplink transmission in the mobile handsets, data cards or dongles supporting WCDMA and/ or HSPA. This product has been designed, tested and characterized to the stringent spectral linearity and other requirements of the 3GPP standards including the HSDPA, HSUPA and HSPA+ UL transmission while keeping the key emphasis on the excellent PAE over the entire power range, i.e. the exceptional average power consumption and talk-time.

Features
• UMTS Band 1 and Band 5 dual-Band PA
• Integrated directional coupler (daisy-chained between both Bands with single coupled out port and internally terminated isolation port)
• High directivity (small coupled power or delivered power variation into mismatched load)
• 3-mode power/gain control (active bypass, mid power, and high power modes)
• Excellent PAE in low and mid power ranges.
• 3.5mA quiescent current in active bypass (low-power) mode
• Excellent average power consumption and talk-time
• Spectral linearity supporting HSDPA, HSUPA, and HSPA+
• Internally matched 50Ω RF input & output ports
• Internal RF input & output DC blocking capacitors
• Internal Vcc bypass capacitors
• Internal Vref eliminating external LDO regulators and switches
• 1.8V CMOS compatible control logics (VH=1.35V~3.1V)
• 4 x 5 x 1mm 14-pad leadless surface-mount package
• Lead-free, RoHS compliant, Halogen-free, Sb-free, Green

Applications
• UMTS Band 1 and Band 5 Uplink Transmission in WCDMA / HSDPA / HSUPA / HSPA+ handsets, data cards and dongles

零件编号(s) : MAX2653EUB
MaximIC
Maxim Integrated
产品描述 (功能) : GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers

General Description
The MAX2651/MAX2652/MAX2653 silicon germanium (SiGe), low-noise amplifiers (LNAs) are intended for use in GSM900, DCS1800, and PCS1900 Band wireless handsets. The MAX2651/MAX2652 consist of two LNAs, one optimized for the GSM900 Band and the other optimized for the DCS1800/PCS1900 Bands. They feature a Band-select pin to switch between the two LNAs, as well as a gain-step input to reduce the gain of each LNA by 20dB and reduce supply current. The MAX2652 is functionally equivalent to the MAX2651, but features a low power shutdown mode. The MAX2653 consists of a single LNA optimized for the DCS1800 and PCS1900 Bands, and has a shutdown feature and a 20dB gain step.

Features
♦ Wide Operating Frequency Range
    800MHz to 1000MHz (MAX2651/52)
    1800MHz to 2000MHz (MAX2651/52/53)
♦ Excellent Low-Noise Performance
    1.2dB/1.3dB over GSM Receive Band (MAX2651/52)
    1.8dB/1.8dB/1.7dB over DCS Receive Band (MAX2651/52/53)
♦ High Gain
    18dB over GSM Receive Band (MAX2651/52)
    18dB/17.5dB/18.5dB over DCS Receive Band (MAX2651/52/53)
♦ 20dB Gain Reduction in Low-Gain Mode
♦ Externally Adjustable Gain
♦ +2.7V to +3.3V Single-Supply Operation
♦ Low Supply Current
    5.4mA to 7.0mA in High-Gain Mode
    2.2mA in Low-Gain Mode
♦ 0.25µA Shutdown Current (MAX2652/53)

Applications
    GSM900/DCS1800 Dual-Band Phones
    GSM900/DCS1800/PCS1900 Triple-Band Phones
    DCS1800 or PCS1900 Single-Mode Phones
    IS-136 TDMA Dual-Band Phones

产品描述 (功能) : GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers

General Description
The MAX2651/MAX2652/MAX2653 silicon germanium (SiGe), low-noise amplifiers (LNAs) are intended for use in GSM900, DCS1800, and PCS1900 Band wireless handsets. The MAX2651/MAX2652 consist of two LNAs, one optimized for the GSM900 Band and the other optimized for the DCS1800/PCS1900 Bands. They feature a Band-select pin to switch between the two LNAs, as well as a gain-step input to reduce the gain of each LNA by 20dB and reduce supply current. The MAX2652 is functionally equivalent to the MAX2651, but features a low power shutdown mode. The MAX2653 consists of a single LNA optimized for the DCS1800 and PCS1900 Bands, and has a shutdown feature and a 20dB gain step.

Features
♦ Wide Operating Frequency Range
    800MHz to 1000MHz (MAX2651/52)
    1800MHz to 2000MHz (MAX2651/52/53)
♦ Excellent Low-Noise Performance
    1.2dB/1.3dB over GSM Receive Band (MAX2651/52)
    1.8dB/1.8dB/1.7dB over DCS Receive Band (MAX2651/52/53)
♦ High Gain
    18dB over GSM Receive Band (MAX2651/52)
    18dB/17.5dB/18.5dB over DCS Receive Band (MAX2651/52/53)
♦ 20dB Gain Reduction in Low-Gain Mode
♦ Externally Adjustable Gain
♦ +2.7V to +3.3V Single-Supply Operation
♦ Low Supply Current
    5.4mA to 7.0mA in High-Gain Mode
    2.2mA in Low-Gain Mode
♦ 0.25µA Shutdown Current (MAX2652/53)

Applications
    GSM900/DCS1800 Dual-Band Phones
    GSM900/DCS1800/PCS1900 Triple-Band Phones
    DCS1800 or PCS1900 Single-Mode Phones
    IS-136 TDMA Dual-Band Phones

零件编号(s) : RF5184 RF5184PCBA-410
RFMD
RF Micro Devices
产品描述 (功能) : DUAL-Band 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE

Product Description

The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz Band (Band 5) and 1850MHz to 1910MHz Band (Band 2). The RF5184 has a digital control line for low power applications to lower quiescent current. The RF5184 is assembled in a 24-pin, 4mmx4mm, QFN package.



Features

• Input/Output Internally Matched@50Ω

• 43% Peak Linear Efficiency for Cell Band

• -41dBc ACLR @ 5MHz for Cell Band

• -40dBc ACLR@5MHz for PCS Band

• 44% Peak Linear Efficiency for PCS Band

• HSDPA Capable



Typical Applications

• 3V W-CDMA Cellular Handset (Band 5)

• 3V W-CDMA US-PCS Handset (Band 2)


UMS
United Monolithic Semiconductors
产品描述 (功能) : Q-Band VCO based on Ku-Band Oscillator and Q-Band Multiplier

Description
The CHV2242a is a monolithic multifunction for frequency generation. It integrates a Ku-Band oscillator with frequency control (VCO), a Q-Band frequency multiplier and buffer amplifiers. For performance optimisation, two external ports (ERC1 and ERC2) allow a passive resonator coupling to the oscillator (at one third of output frequency). On chip Schottky Diode, based on a P-HEMT, is used as varactor. All the active devices are internally self biased

Main Features
■ Ku-Band VCO + Q-Band multiplier
■ On chip varactor
■ External resonator for centre frequency control and phase noise optimisation
■ Low phase noise
■ Auxiliary output at VCO frequency
■ High temperature range
■ On-chip self biasing
■ Automatic assembly oriented
■ Chip size 2.41 x 1.18 x 0.1 mm

UMS
United Monolithic Semiconductors
产品描述 (功能) : Fully Integrated Q-Band VCO based on Ku-Band Oscillator and Q-Band Multiplier (GaAs Monolithic Microwave IC)

Description

The CHV2243 is a monolithic multifunction for frequency generation. It integrates a Ku-Band oscillator with frequency control (VCO), a Q-Band frequency multiplier and buffer amplifiers. The VCO is fully integrated. On chip P-HEMT based Schottky Diode is used as varactor. All the active devices are internally self biased. The circuit is manufactured with the PHEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.



Main Features

■ Ku-Band VCO + Q-Band multiplier

■ Fully integrated VCO

■ Wide frequency tuning range

■ PLL oriented

■ Auxiliary output at VCO frequency

■ High temperature range

■ On-chip self biasing

■ Automatic assembly oriented

■ Chip size 2.41 x 1.18 x 0.1 mm



 


UMS
United Monolithic Semiconductors
产品描述 (功能) : Fully Integrated Q-Band VCO based on Ku-Band Oscillator and Q-Band Multiplier (GaAs Monolithic Microwave IC)

Description

The CHV2243a is a monolithic multifunction for frequency generation. It integrates a Ku-Band oscillator with frequency control (VCO), a Q Band frequency multiplier and buffer amplifiers. The VCO is fully integrated. On chip P-HEMT based Schottky Diode is used as varactor. All the active devices are internally self biased. The circuit is manufactured with the P-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.



Main Features

■ Ku-Band VCO + Q-Band multiplier

■ Fully integrated VCO

■ Wide frequency tuning range

■ PLL oriented

■ Auxiliary output at VCO frequency

■ High temperature range

■ On-chip self biasing

■ Automatic assembly oriented

■ Chip size 2.48 x 1.18 x 0.1 mm



 


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