600mA General Purpose PNP EPITAXIAL PLANAR TRANSISTOR
Features • High collector-emitterbreakdien voltage. (BVCEO = -60V@IC=-10mA) • PNP SILICON EPITAXIAL PLANAR TRANSISTOR, is designed for general purpose and amplifier applications. • As complementary TYPE, the NPN TRANSISTOR FMBT2222/ FMBT2222A is recommended. • Capable of 225mW power dissipation. • Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.