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Eon
Eon Silicon Solution Inc.
产品描述 (功能) : Base MCP Stacked Multi-Chip Product (MCP) FLASH MEMORY and RAM 32 MegaBIT (2M x 16-BIT) CMOS 3.0 Volt-only Simultaneous Operation Page Mode FLASH MEMORY and 16 MegaBIT (1M x 16-BIT) Pseudo Static RAM

EN71PL032A Base MCP    

Stacked Multi-Chip Product (MCP) FLASH MEMORY and RAM

32 MegaBIT (2M x 16-BIT) CMOS 3.0 Volt-only Simultaneous

Operation Page Mode FLASH MEMORY and 16 MegaBIT (1M x 16-BIT) Pseudo Static RAM



General Description

The EN71PL series is a product line of stacked Multi-Chip Product (MCP) packages and consists of:

■EN29PL032A (Simultaneous Read/Write) FLASH MEMORY die.

■ Pseudo SRAM.



Distinctive Characteristics

MCP Features

■ Power supply voltage of 2.7 V to 3.3V

■ High performance

    - 70 ns

■ Package

    - 7 x 9 x 1.2mm 56 ball FBGA

■ Operating Temperature

    - 25°C to +85°C


零件编号(s) : M6MT160S4BVP
Mitsubishi
MITSUBISHI ELECTRIC
产品描述 (功能) : 16,777,216-BIT(1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT(262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)

DESCRIPTION
The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi  Chip Package (S-MCP) that contents 16M-BITs FLASH MEMORY and 4M-BITs Static RAM in a 48-pin TSOP (TYPE-I).
16M-BITs FLASH MEMORY is a 2097152 bytes /1048576 words 3.3V-only, and high performance non-volatile MEMORY fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided BIT-line NOR) architecture for the MEMORY cell.
4M-BITs SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

FEATURES
• Access time
                       FLASH MEMORY  90ns (Max.)
                       SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature
                        W version Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
   Mobile communication  products

Fujitsu
Fujitsu
产品描述 (功能) : FLASH MEMORY CMOS 64M (4M x 16) BIT

■ FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

   Minimizes system level power requirements

• Compatible with JEDEC-standards

   Uses same software commands with single-power supply FLASH

• Address don’t care during the command sequence

• Industry-standard pinouts

   63-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

   90 ns maximum access time

• Flexible sector architecture

   One hundred twenty-eight 32K word sectors

   Any combination of sectors can be concurrently erased. Also supports full chip erase

• HiddenROM region

   128 word of HiddenROM, accessible through a new “HiddenROM Enable” command sequence

   Factory serialized and protected to provide a secure electronic serial number (ESN)

• Ready/Busy Output (RY/BY)

   Hardware method for detection of program or erase cycle completion

• ACC input pin

   At VACC, increases program performance

• Embedded EraseTM* Algorithms

   Automatically pre-programs and erases the chip or any sector

• Embedded programTM* Algorithms

   Automatically writes and verifies data at specified address

• Data Polling and Toggle BIT feature for detection of program or erase cycle completion

• Automatic sleep mode

   When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhiBIT ≤ 2.5 V

• Erase Suspend/Resume

   Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector group protection

   Hardware method disables any combination of sector groups from program or erase operations

• Sector Group Protection Set function by Extended sector protect command

• Fast Programming Function by Extended Command

• Temporary sector group unprotection

   Temporary sector group unprotection via the RESET pin

   This feature allows code changes in previously locked sectors

• In accordance with CFI (Common FLASH MEMORY Interface)



 


Mitsubishi
MITSUBISHI ELECTRIC
产品描述 (功能) : 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)

DESCRIPTION
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-BITs FLASH MEMORY and 4M-BITs Static RAM in a 48-pin TSOP (TYPE-I).
16M-BITs FLASH MEMORY is a 1048576 words, 3.3V-only, and high performance non-volatile MEMORY fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided BIT-line NOR) architecture for the MEMORY cell.
4M-BITs SRAM is a 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T162S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.

FEATURES
• Access time                                        
                         FLASH MEMORY           90ns (Max.)
                         SRAM                       85ns (Max.)
• Supply voltage                                 Vcc=2.7 ~ 3.6V
• Ambient temperature                     
                         W version                  Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
   Mobile communication  products

产品描述 (功能) : FLASH MEMORY CMOS 64M (4M × 16) BIT

■ GENERAL DESCRIPTION

The MBM29LV652UE is a 64M-BIT, 3.0 V-only FLASH MEMORY organized as 4M words of 16 BITs each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.



■ FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

   Minimizes system level power requirements

• Compatible with JEDEC-standards

   Uses same software commands with single-power supply FLASH

• Address don’t care during the command sequence

• Industry-standard pinouts

   63-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

   90 ns maximum access time

• Flexible sector architecture

   One hundred twenty-eight 32K word sectors

   Any combination of sectors can be concurrently erased. Also supports full chip erase

• Hidden ROM (Hi-ROM) region

   128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence

   Factory serialized and protected to provide a secure electronic serial number (ESN)

• Ready/Busy Output (RY/BY)

   Hardware method for detection of program or erase cycle completion

• ACC input pin

   At VACC, increases program performance

• Embedded EraseTM* Algorithms

   Automatically pre-programs and erases the chip or any sector

• Embedded programTM* Algorithms

   Automatically writes and verifies data at specified address

• Data Polling and Toggle BIT feature for detection of program or erase cycle completion

• Automatic sleep mode

   When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhiBIT ≤ 2.5 V

• Erase Suspend/Resume

   Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector group protection

   Hardware method disables any combination of sector groups from program or erase operations

• Sector Group Protection Set function by Extended sector protect command

• Fast Programming Function by Extended Command

• Temporary sector group unprotection

   Temporary sector group unprotection via the RESET pin

   This feature allows code changes in previously locked sectors

• In accordance with CFI (Common FLASH MEMORY Interface)



 


零件编号(s) : M6MFT16S2TP M6MFB16S2TP
Mitsubishi
MITSUBISHI ELECTRIC
产品描述 (功能) : 16777216-BIT(2M x 8-BIT/1Mx 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION
The MITSUBISHI M6MFB/T16S2TP is a Multi Chip Package (MCP) that contents 16-MBIT FLASH MEMORY and 2M-BIT Staic RAM in a 82-pin TSOP(TYPE-II).

Mitsubishi
MITSUBISHI ELECTRIC
产品描述 (功能) : 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

DESCRIPTION
The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi  Chip Package (S-MCP) that contents 16M-BITs FLASH MEMORY and 4M-BITs Static RAM in a 48-pin TSOP (TYPE-I).
16M-BITs FLASH MEMORY is a 2097152 bytes /1048576 words 3.3V-only, and high performance non-volatile MEMORY fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided BIT-line NOR) architecture for the MEMORY cell.
4M-BITs SRAM is a 524288bytes / 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T160S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight .

FEATURES
• Access time
                        FLASH MEMORY  90ns (Max.)
                        SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature
                      W version Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
   Mobile communication  products

零件编号(s) : M6MGB331S4BKT M6MGT331S4BKT
Renesas
Renesas Electronics
产品描述 (功能) : 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package)

Description
The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- mMCP) that contents 32M-BIT FLASH MEMORY and 4M-BIT Static RAM in a 52-pin TSOP for lead free use.
32M-BIT FLASH MEMORY is a 4,194,304 bytes / 2,097,152 words, 3.3V-only, and high performance non-volatile MEMORY fabricated by CMOS technology for the peripheral circuit and DINOR (Divided BIT-line NOR) architecture for the MEMORY cell.
4M-BIT SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T331S4BKT is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.
M6MGB/T331S4BKT provides for Software Lock Release function. Usually, all MEMORY blocks are locked and can not be programmed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation can be executed.

Features
   Access Time FLASH 70ns (Max.)
                        SRAM 70ns (Max.)
   Supply Voltage VCC=2.7 ~ 3.0V
   Ambient Temperature Ta=-40 ~ 85 °C
   Package 52pin TSOP(Type-II),
                  Lead pitch 0.4mm
                  Outer-lead finishing:Sn-Cu

Application
   Mobile communication products

Mitsubishi
MITSUBISHI ELECTRIC
产品描述 (功能) : 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

DESCRIPTION

The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-BIT CMOS boot block FLASH Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided BIT line NOR) architecture for the MEMORY cells, and are available in 6x8-balls CSP (0.75mm ball  pitch).



APPLICATION

• Digital Cellular Phone

• Telecommunication

• Mobile Computing Machine

• PDA (Personal Digital Assistance)

• Car Navigation System

• Video Game Machine



 


零件编号(s) : NX25F641C-3T NX25F641C
NexFlash
NexFlash -> Winbond Electronics
产品描述 (功能) : 64M-BIT SERIAL FLASH MEMORY WITH 4-PIN SPI INTERFACE

DESCRIPTION
The NX25F641C Serial FLASH MEMORY provide a storage solution for systems which are limited in power, pins, space, hardware and firmware resources. The NX25F641C is ideal for applications that store voice, images and data in a portable/mobile environment as well for down-loading code into controllers with embedded DRAM or SRAM.

FEATURES
64MBIT Serial FLASH MEMORY
FLASH storage for systems with limited pins, space, and power
    – Ideal for high density serial code–shadowing
    – Data, voice and image storage
    – Battery–operated products
• Nonvolatile MEMORY Technology
    – Single transistor EEPROM MEMORY
    – 16,384 sectors of 528 bytes each
    – Sector erase/write time of 10 ms/sector (typical)
    – Ten year data retention
• 4–pin SPI Serial Interface
    – Easily interfaces to popular microcontrollers
    – Clock operation as fast as 20MHz
    – Optional Hold and Ready/Busy pin functions
• Ultra–low Power for Battery–Operation
    – Single 2.7–3.6V supply for Read, Erase/Write
    – 1 µA standby, 5 mA active (typical)
• Special Features
    – Auto-increment sector read for serial code–shadowing applications
    – Two on–board 528–byte SRAM Buffers
    – Byte–level addressing
    – Configurable software write–protection
• Package Options
    – 32–PIN TSOP (Type I)
    – Removable Cards and Modules

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