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零件编号(s) : IRF9520
Intersil
Intersil
产品描述 (功能) : 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode Silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

零件编号(s) : IRF510
IR
International Rectifier
产品描述 (功能) : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

零件编号(s) : IRF510
Intersil
Intersil
产品描述 (功能) : 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode Silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.



Features

• 5.6A, 100V

•rDS(ON)= 0.540Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


零件编号(s) : NTE325
NTE-Electronic
NTE Electronics
产品描述 (功能) : Silicon NPN RF Power Transistor 50W @ 30MHz

Description:
The NTE325 is a Silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.

Features:
● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%

零件编号(s) : STK4192 STK4192II
SANYO
SANYO -> Panasonic
产品描述 (功能) : AF Power Amplifier (Split Power Supply) (50W + 50W min, THD = 0.4%)

AF Power Amplifier (Split Power Supply)

(50W + 50W min, THD = 0.4%)



Features

• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.

• Small-sized package whose pin assignment is the same as that of the STK4101II series

• Built-in muting circuit to cut off various kinds of pop noise

• Greatly reduced heat sink due to substrate temperature 125°C guaranteed

• Excellent cost performance



 


零件编号(s) : STK433-760-E
SANYO
SANYO -> Panasonic
产品描述 (功能) : 2-channel class AB audio power IC, 50W+50W

Overview

The STK433-760-E is a hybrid IC designed to be used in 50W ×50W (2-channel) class AB audio power amplifiers.



Features

•Miniature package (47.0mm ×25.6mm ×9.0mm)

•Output load impedance: RL= 6Ω to 4Ω supported

•Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs



Applications

•Audio power amplifiers.

 


零件编号(s) : RFP6P08 RFP6P10
Intersil
Intersil
产品描述 (功能) : -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode Silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.

Formerly developmental type TA09046.



Features

• -6A, -80V and -100V

• rDS(ON) = 0.600Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”



 


零件编号(s) : IRF9520
Fairchild
Fairchild Semiconductor
产品描述 (功能) : 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode Silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

零件编号(s) : FRS9130H FRS9130D FRS9130R
Intersil
Intersil
产品描述 (功能) : 6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs

Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 6A, -100V, RDS(on) = 0.565Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

Intersil
Intersil
产品描述 (功能) : 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs

Description

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm 2for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.



Features

• 6A, -100V, RDS(on) = 0.550Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 1.50nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm2

- Usable to 3E14 Neutrons/cm2


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