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6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode Silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode Silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

• 5.6A, 100V

•rDS(ON)= 0.540Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Description:
The NTE325 is a Silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.

Features:
● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50%

AF Power Amplifier (Split Power Supply)

(50W + 50W min, THD = 0.4%)

Features

• The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the out put range of 6W to 50W and enable easy design.

• Small-sized package whose pin assignment is the same as that of the STK4101II series

• Built-in muting circuit to cut off various kinds of pop noise

• Greatly reduced heat sink due to substrate temperature 125°C guaranteed

• Excellent cost performance

Overview

The STK433-760-E is a hybrid IC designed to be used in 50W ×50W (2-channel) class AB audio power amplifiers.

Features

•Miniature package (47.0mm ×25.6mm ×9.0mm)

•Output load impedance: RL= 6Ω to 4Ω supported

•Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs

Applications

•Audio power amplifiers.

 

These are P-Channel enhancement mode Silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.

Formerly developmental type TA09046.

Features

• -6A, -80V and -100V

• rDS(ON) = 0.600Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode Silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Description
The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features
• 6A, -100V, RDS(on) = 0.565Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
    - Meets Pre-Rad Specifications to 100KRAD(Si)
    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
    - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
    - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
    - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.50nA Per-RAD(Si)/sec Typically
• Neutron
    - Pre-RAD Specifications for 3E13 Neutrons/cm2
    - Usable to 3E14 Neutrons/cm2

Description

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm 2for 500V product to 1E14n/cm² for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features

• 6A, -100V, RDS(on) = 0.550Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 1.50nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E13 Neutrons/cm²

- Usable to 3E14 Neutrons/cm²