Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900DU-24NF
Mega Power Dual™ IGBTMOD
900 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (TC = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current (TC = 25°C)**
Peak Emitter Current**
Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C)
Mounting Torque, M6 Mounting Screws
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
–
Mounting Torque, M6 Main Terminal Screw
–
Weight (Typical)
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
CM900DU-24NF
-40 to 150
-40 to 125
1200
±20
900
1800*
900
1800*
5950
40
40
1400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Total Gate Charge
Emitter-Collector Voltage**
VGE(th)
VCE(sat)
(Chip)
R(lead)
QG
VEC
IC = 90mA, VCE = 10V
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V, Tj = 125°C
IC = 900A, Terminal-chip
VCC = 600V, IC = 900A, VGE = 15V
IE = 900A, VGE = 0V
Min.
Typ.
Max. Units
–
–
1
mA
–
–
0.5
µA
6
7
8
Volts
–
1.9
2.5
Volts
–
2.1
–
Volts
–
0.143 –
mΩ
–
4800
–
nC
–
–
3.4
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
–
VCE = 10V, VGE = 0V
–
–
VCC = 600V,
–
IC = 900A, IE = 900A,
–
VGE1 = VGE2 = 15V,
–
RG = 1.0⍀,
–
Inductive Load
–
Switching Operation
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
–
–
–
–
–
–
50
Max.
140
16
3
300
200
800
300
500
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
2