SI3457DV 查看數據表（PDF） - Fairchild Semiconductor

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SI3457DV

Single P-Channel Logic Level PowerTrench® MOSFET

Fairchild Semiconductor 

April 2001

PRELIMINARY

Si3457DV

Single P-Channel Logic Level PowerTrench MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using Fairchild’s advanced PowerTrench process. It

has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –4 A, –30 V.

RDS(ON) = 50 mΩ @ VGS = –10 V

RDS(ON) = 75 mΩ @ VGS = –4.5 V

• Low gate charge

• High performance trench technology for extremely

low RDS(ON)

S

D

D

SuperSOT TM-6

G

D

D

1

6

2

5

3

4

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Maximum Power Dissipation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.457

Si3457DV

7’’

Ratings

–30

±25

–4

–20

1.6

0.8

–55 to +150

78

30

Tape width

8mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

Si3457DV Rev A (W)

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