K3565(2002) 查看數據表（PDF） - Toshiba
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K3565 Datasheet PDF : 3 Pages
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TENTATIVE
2SK3565
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3565
Switching Regulator Applications
unit：ｍｍ
• Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
Unit
900
V
900
V
±30
V
5
A
15
45
W
595
mJ
5
A
4.5
mJ
150
°C
-55~150
°C
1.1
1.1
0.69±0.15
2.54±0.25
2.54±0.25
123
1. Gate
2. Drain
3. Source
JEDEC
―
JEITA
―
TOSHIBA ―
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
°C/W
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C, L = 43.6 mH, IAR = 5.0 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2002-12-11
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