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K10A60D 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
K10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications
Toshiba
K10A60D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
2.5
COMMON SOURCE
VGS = 10 V
2.0
PULSE TEST
1.5
ID=10A
5A
1.0
2.5A
0.5
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK10A60D
I
DR
– V
DS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
53
1
VGS
=
0,
−
1 V
0.1
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −
1.2
−
1.4
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
1000
100
CAPACITANCE – V
DS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS = 10 V
ID = 1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
16
300
12
VDD
=
100 V
400
200
Common source
8
200
ID= 10 A
VGS
Tc = 25°C
100
4
Pulse test
0
0
0
10
20
30
40
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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