IDT6167LA55YB 查看數據表（PDF） - Integrated Device Technology
零件编号
产品描述 (功能)
生产厂家
IDT6167LA55YB Datasheet PDF : 8 Pages
| |||
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
TIMING WAVEFORM OF READ CYCLE NO. 1(1, 2)
tRC
ADDRESS
DATAOUT
tAA
tOH
PREVIOUS DATAOUT VALID
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATAOUT VALID
2981 drw 06
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 3)
tRC
CS
HIGH IMPEDANCE
DATAOUT
tACS
tCLZ (4)
tPU
ICC
VCC SUPPLY
CURRENT
ISB
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continuously selected, CS is LOW.
3. Address valid prior to or coincedent with CS transition LOW.
4. Transition is measured ±200mV from steady state.
tCHZ (4)
DATAOUT VALID
HIGH
IMPEDANCE
tPD
2981 drw 07
5.2
6
Share Link: 