SIM200D06AV1 查看數據表（PDF） - SemiWell Semiconductor

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SIM200D06AV1

“HALF-BRIDGE” IGBT

SemiWell Semiconductor 

Preliminary

SIM200D06AV1

Fig.1, Output characteristic (typical)

Fig. 2, Output characteristic &VGE (typical)

VGE = 15V

Tvj = 150℃

Fig 3, Transfer characteristic (typical)

Fig.4, Reverse bias safe operating area (RBSOA)

VCE = 20V

VGE = ±15V, RGoff = 2.4Ω, Tvj = 150℃

Fig.5, Forward characteristic of diode (typical)

IF = f(VF)

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