Philips Semiconductors
TEA1532
GreenChip™II SMPS control IC
9. Thermal characteristics
Table 4:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
10. Characteristics
Conditions
in free air; SO8 package
in free air; DIP8 package
Typ
Unit
150
K/W
95
K/W
Table 5: Characteristics
Tamb = 25 °C; VCC = 15 V; all voltages are measured with respect to ground (pin 2); currents are positive when flowing into
the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
Start-up current source (pin DRAIN)
IDRAIN
supply current drawn from
pin DRAIN
VDRAIN > 100 V;
VCC = 0 V
with auxiliary supply
1.0 1.2 1.4 mA
-
100 300 µA
VB
breakdown voltage
Vm
mains-dependent
operation-enabling level
650 -
60 -
-
V
100 V
Supply voltage management (pin VCC)
Vstart
start-up voltage
VUVLO
lock-out undervoltage
Vhys
hysteresis voltage
Ich(h)
high charging current
Ich(l)
low charging current
Irestart
restart current
Ioper
supply current under normal
operation
Vstart − VUVLO
VDRAIN > 100 V; VCC < 3V
VDRAIN > 100 V;
3 V < VCC < VUVLO
VDRAIN > 100 V;
VUVLO < VCC < Vstart
no load on pin DRIVER
10.3 11 11.7 V
8.1 8.7 9.3 V
2.0 2.3 2.6 V
−1.2 −1 −0.8 mA
−1.2 −0.75 −0.45 mA
−650 −550 −450 µA
1.1 1.3 1.5 mA
Demagnetization management (pin DEM)
Vth(DEM)
demagnetization comparator
threshold voltage
50 80 110 mV
Vth(CCM)
continuous conduction mode
detection threshold voltage
−80 −50 −20 mV
Iprot(dem)
Vclamp(neg)
Vclamp(pos)
tsupp
pin protection current
negative clamp voltage
positive clamp voltage
suppression of transformer
ringing at start of secondary
stroke
VDEM = 50 mV
IDEM = −500 µA
IDEM = 250 µA
−60 -
−10 nA
−0.5 −0.45 −0.40 V
0.5 0.7 0.9 V
1.1 1.5 1.9 µs
Pulse width modulator
ton(min)
ton(max)
δmax
minimum on-time
maximum on-time
maximum duty-cycle
QR mode
-
tleb
-
ns
20 25 30 µs
67 70 73 %
9397 750 13113
Preliminary data sheet
Rev. 01 — 28 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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