Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=180V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2SC1783
MIN TYP. MAX UNIT
120
V
6
V
1.5
V
2.0
V
100 μA
100 μA
30
165
pF
10
MHz
2