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2SD1275AQ 查看數據表(PDF) - Quanzhou Jinmei Electronic
零件编号
产品描述 (功能)
生产厂家
2SD1275AQ
Silicon NPN Power Transistors
Quanzhou Jinmei Electronic
2SD1275AQ Datasheet PDF : 3 Pages
1
2
3
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1275 2SD1275A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
V
CEO
Collector-emitter
breakdown voltage
2SD1275
2SD1275A
CONDITIONS
I
C
=30mA , I
B
=0
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=8mA
V
BE
Base-emitter voltage
V
CE
=4V; I
C
=2A
2SD1275 V
CB
=60V; I
E
=0
I
CBO
Collector cut-off current
2SD1275A V
CB
=80V; I
E
=0
2SD1275 V
CE
=30V; I
B
=0
I
CEO
Collector cut-off current
2SD1275A V
CE
=40V; I
B
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=1A ; V
CE
=4V
h
FE-2
DC current gain
f
T
Transition frequency
Switching times
I
C
=2A ; V
CE
=4V
I
C
=0.5A;
V
CE
=10V;f=1MHz
t
on
Turn-on time
t
s
Storage time
t
f
Fall time
I
C
=2A ;I
B1
=8mA
I
B2
=-8mA;V
CC
=50V
h
FE-2
Classifications
Q
R
2000-5000 4000-10000
MIN
TYP.
MAX UNIT
60
V
80
2.5
V
2.8
V
1
mA
1000
2000
2
mA
2
mA
10000
20
MHz
0.5
μ
s
4
μ
s
1
μ
s
JMnic
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