BC182LA 查看數據表（PDF） - Fairchild Semiconductor

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BC182LA

SILICON NPN SMALL SIGNAL TRANSISTOR

Fairchild Semiconductor 

DISCRETE POWER & SIGNAL

TECHNOLOGIES

BC182LA

SILICON NPN SMALL SIGNAL TRANSISTOR

ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated)

SYM

CHARACTERISTICS

MIN MAX UNITS TEST CONDITIONS

COB

Output Capacitance

5.0 pF

VCB = 10 V, f = 1 MHz

fT

Current Gain - Bandwidth Product

150

MHz

VCE = 5 V IC = 10 mA

f = 100 Mhz

hfe

Small Signal Current Gain

125 260 -

VCE = 5 V, IC=2.0 mA, f =1KHz

NF

Noise Figure

10 dB

VCE = 5 V, IC = 200 uA,

Rg = 2 Kohms, f = 1 KHz

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. These ratings are based on a maximum junction temperature of 150 degrees C.

1998 Fairchild Semiconductor Corporation

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