BFP460
Surface mount wideband silicon NPN RF bipolar transistor
Electrical characteristics
Figure 5
0.7
pF
0.5
0.4
0.3
0.2
0.1
00
2
4
6
8
10
Collector base capacitance CCB = f(VCB), f = 1 MHz
V
14
VCB
50
dB
40
Figure 6
30
20
Gms
|S21|²
10
Gma
00
1
2
3
4
GHz
6
f
Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 20 mA
Datasheet
9
Revision 2.0
2019-01-25