BFR193TF 查看數據表（PDF） - Vishay Semiconductors

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BFR193TF

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Transition frequency

VCE = 8 V, IC = 50 mA,

fT

f = 1 GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

Collector-emitter capacitance VCE = 10 V, f = 1 MHz

Cce

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

Noise figure

VCE = 8 V, IC = 10 mA,

F

ZS = ZSopt, ZL = 50 Ω,

f = 900 MHz

F

Power gain

VCE = 8 V, IC = 30 mA,

Gpe

ZS = ZSopt, ZL = 50 Ω,

f = 900 MHz

VCE = 8 V, IC = 30 mA,

Gpe

ZS = ZSopt, ZL = 50 Ω,

f = 2 GHz

Transducer gain

VCE = 8 V, IC = 30 mA,

f = 900 MHz, ZO = 50 Ω

|S21e|2

VCE = 8 V, IC = 30 mA, f = 2 GHz,

ZO = 50 Ω

|S21e|2

Third order intercept point

VCE = 8 V, IC = 50 mA,

IP3

f = 900 MHz

Package Dimensions in mm

BFR193TF

Vishay Semiconductors

Typ.

Max

Unit

7.5

GHz

0.6

pF

0.25

pF

1.6

pF

1.2

dB

2.1

dB

15.5

dB

9.5

dB

14

dB

7.5

dB

34

dBm

1.5 (0.059)

1.7 (0.066)

ISO Method E

3 x 0.20 (0.008)

3 x 0.30 (0.012)

0.1 B

0.1 A

1.5 (0.059)

1.7 (0.066)

0.4 (0.016)

0.65(0.026)

1.15( 0.045)

16866

0.5 (0.016)

1.0 (0.039)

0.5 (0.016)

Document Number 85103

Rev. 1.3, 28-Apr-05

www.vishay.com

3

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