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NEZ3642-8DD 查看數據表(PDF) - NEC => Renesas Technology
零件编号
产品描述 (功能)
生产厂家
NEZ3642-8DD
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
NEZ3642-8DD Datasheet PDF : 18 Pages
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4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*
T
C
= 25 ˚C
SYMBOL
V
DS
V
GS
V
GD
I
D
I
G
P
T
*
Tch
T
stg
RATINGS
NEZ-4D, 4DD
NEZ-8D, 8DD
15
15
– 12
–12
– 18
– 18
4.5
9.0
25
50
25
50
175
175
– 65 to + 175
– 65 to + 175
UNIT
V
V
V
A
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Trans-Conductance
Gate to Drain Voltage
Thermal Resistance
SYMBOL
I
DSS
V
P
g
m
B
VGD0
R
th
Part No.
NEZ-4D
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
NEZ-4D, 4DD
NEZ-8D, 8DD
MIN.
1.0
2.0
– 3.5
– 3.5
—
—
20
20
—
—
TYP.
2.3
4.5
– 2.0
– 2.0
1300
2600
22
22
5.0
2.5
MAX.
3.5
7.0
– 0.5
– 0.5
—
—
—
—
6.0
3.0
UNIT
A
V
mS
V
˚C/W
TEST CONDITIONS
V
DS
= 2.5 V, V
GS
= 0 V
V
DS
= 2.5 V, I
DS
= 15 mA
V
DS
= 2.5 V, I
DS
= 30 mA
V
DS
= 2.5 V, I
DS
= 1 A
V
DS
= 2.5 V, I
DS
= 2 A
I
GD
= 15 mA
I
GD
= 30 mA
Channel to Case
2
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