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零件编号
产品描述 (功能)
Q67100-Q850 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
Q67100-Q850
512kx8-Bit Dynamic RAM
Infineon Technologies
Q67100-Q850 Datasheet PDF : 22 Pages
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HYB 514800BJ -60/-70/-80
512k x 8 DRAM
AC Characteristics
4)
T
A
= 0 to 70 ˚C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
-60
min. max.
Random read or write
t
RC
time
110
–
Read-write cycle time
t
RWC
165
–
Fast page mode
t
PC
45
–
cycle time
Fast page mode
t
PRWC
100
–
read/write cycle time
Access time from
t
RAC
–
60
RAS
6) 11)
Access time from
t
CAC
–
20
CAS
6) 11)
Access time from
t
AA
–
30
column address
6) 12)
Access time from
t
CPA
–
40
CAS precharge
6)
CAS to output in
t
CLZ
0
–
low-Z
6)
Output buffer turn-off
t
OFF
0
20
delay from CAS
7)
Transition time
t
T
3
50
(rise and fall)
5)
RAS precharge time
t
RP
40
RAS pulse width
t
RAS
60
RAS pulse width in
t
RASP
60
fast page mode
–
10000
200000
CAS pulse width
t
CAS
20
RAS hold time
t
RSH
20
CAS hold time
t
CSH
60
RAS hold time from
t
RHCP
40
CAS precharge
(Fast page mode)
10000
–
–
–
CAS precharge to
t
CPWD
60
–
WRITE delay time
(FPM read-modify-write)
Limit Values
-70
min. max.
130
–
185
–
45
–
100
–
–
70
–
20
–
35
–
40
0
–
0
20
3
50
50
–
70
10000
70
200000
20
10000
20
–
70
–
45
–
65
–
min.
150
205
50
105
–
–
–
–
0
0
3
60
80
80
20
20
80
50
70
Unit
-80
max.
–
ns
–
ns
–
ns
–
ns
80
ns
20
ns
40
ns
45
ns
–
ns
20
ns
50
ns
–
ns
10000 ns
200000 ns
10000 ns
–
ns
–
ns
–
ns
–
ns
Semiconductor Group
130
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