Variable Capacitance Diodes
MA2Z331 (MA331)
Silicon epitaxial planar type
s Features
• Small series resistance: rD = 0.18 Ω (typ.)
• Good linearity of C − V curve
• Small type package, optimum for down-sizing of equipment
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Forward current (DC)
Junction temperature
Storage temperature
VR
12
V
IF
20
mA
Tj
150
°C
Tstg
−55 to +150
°C
0.30+–00..0150
2
1
1.25±0.10
7˚
Unit: mm
0.16
+0.10
–0.06
1: Anode
2: Cathode
SMini2-G1 Package
Marking Symbol: 6T
s Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance *
IR
CD(1V)
CD(2V)
CD(4V)
CD(10V)
CD(1V)/CD(4V)
CD(2V)/CD(10V)
rD
VR = 12 V
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 10 V, f = 1 MHz
CD = 9 pF, f = 470 MHz
Note) 1. Rated input/output frequency: 470 MHz
2. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Min Typ Max Unit
10
nA
17.0
20.0 pF
14.0 15.0 16.0
10.0
12.4
5.5 6.0 6.5
1.53 1.6 1.83
2.25 2.5 2.75
0.18 0.22
Ω
Publication date: April 2002
Note) The part number in the parenthesis shows conventional part number.
SKD00028BED
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