Philips Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Product specification
PEMH1; PUMH1
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
TR1
NPN
TR2
NPN
R1
bias resistor
R2
bias resistor
TYP.
−
−
−
−
22
22
MAX. UNIT
50 V
100 mA
−
−
−
−
−
kΩ
−
kΩ
DESCRIPTION
NPN/NPN resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMH1
PUMH1
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
H2
H*2(1)
NPN/PNP
COMPLEMENT
PEMD2
PUMD2
PNP/PNP
COMPLEMENT
PEMB1
PUMB1
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMH1
PUMH1
SIMPLIFIED OUTLINE AND SYMBOL
handbook, half6page 5
1
2
Top view
6
4
TR1
3
1
MHC650
5
R1 R2
R2 R1
2
4
TR2
3
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 08
2