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零件编号
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RF2001T4S 查看數據表(PDF) - ROHM Semiconductor
零件编号
产品描述 (功能)
生产厂家
RF2001T4S
Fast recovery diode
ROHM Semiconductor
RF2001T4S Datasheet PDF : 4 Pages
1
2
3
4
RF2001T4S
Electrical characteristics curves
Data Sheet
100
Ta=75
C
Ta=125
C
10
Ta=150
C
1
Ta=25
C
Ta=-25
C
0.1
1000000
100000
10000
1000
100
10
Ta=150
C
Ta=125
C
Ta=75
C
Ta=25
C
Ta=-25
C
0.01
0
200 400 600 800 1000 1200 1400 1600 1800
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0 50 100 150 200 250 300 350 400 450
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
1600
1500
1400
1300
500
Ta=25
C
450
I
F
=20A
n=20pcs
400
350
300
250
200
150
100
AVE:1399mV
50
0
V
F
DISPERSION MAP
Ta=25
C
V
R
=400V
n=20pcs
AVE:55.8nA
I
R
DISPERSION MAP
1000
100
10
0
500
480
460
440
420
400
f=1MHz
5
10
15
20
25
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
Ta=25
C
f=1MHz
V
R
=0V
n=10pcs
AVE:442.1pF
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
10
0.1
30
Ifsm
1cyc
25
8.3ms
20
AVE:236.0A
15
10
5
0
I
FSM
DISPERSION MAP
AVE:22.6ns
Ta=25
C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
1000
100
10
Ifsm
8.3ms 8.3ms
1cyc
trr DISPERSION MAP
1
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
Ifsm
t
100
IM=100mA
I
F
=1A
1ms
time
10
300us
1
Rth(j-a)
Rth(j-c)
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
0.1
100
0.001 0.01 0.1
1
10
100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
Sin(
=180)
D=1/2
DC
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2011.05 - Rev.B
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