Philips Semiconductors
Wideband code division multiple access
frequency division duplex zero IF receiver
Objective specification
UAA3580
SYMBOL
PARAMETER
CONDITIONS
αLPF
LPF attenuation
fi = 5 MHz
fi = 10 MHz
fi = 15 to 60 MHz
RF synthesizer; pin RFCPO
fRFLO
fcomp(RF)
∆fPLL
Φn
Isink
Isource
Vo(CP)
KΦ
Ileak(CP)
synthesizer frequency
RF comparison frequency
frequency resolution
fcomp = 13 to 26 MHz
close-in-phase noise
fcomp = 26 MHz
at 2 kHz offset
sink current
source current
charge pump output voltage
Rext = 1.8 kΩ; THD = 1%
Rext = 1.8 kΩ; THD = 1%
charge pump current
within specified range
PFD gain
Rext = 1.8 kΩ; THD = 1%
charge pump leakage current over full charge pump
in off state
voltage range
MIN.
39
72
91
2.11
−
0.05
−
−
170
170
0.4
27
−1
TYP.
42
75
94
−
26
−
−
−85
200
200
−
32
−
MAX.
−
−
−
2.17
−
−
6.2
−80
230
230
VCCA − 0.4
37
+1
Fractional-N synthesizer; fRFLO
=
fref
×
N----2-R----X-
+
Kfrac(RX)
where Kfrac(RX)
=
2---1-2---2
×
KRX
+
12--
N
integer divider ratio
Kfrac
fractional divider ratio
Integrated RF VCO; pin RFCPO
fRF
GVCO
Vtune
∆fVCC
tcal(VCO)
RF frequency
VCO gain
tuning voltage
pushing
VCO calibration time
VRFCPO = 0 to 3.3 V
VRFCPO = 1.3 V
after RXON = LO ≥ HI
CLKPLL synthesizer; pin CPCLKO
fCLKPLL
fcomp
∆fPLL
AFCcor
Isink
Isource
Vo(CP)
synthesizer frequency
comparison frequency
frequency resolution
AFC correction range
sink current
source current
charge pump output voltage
VCPCLKO = 0 to 3.3 V
fref = 26 MHz
Rext = 1.8 kΩ; THD = 1%
Rext = 1.8 kΩ; THD = 1%
charge pump current
within specified range
KΦ
Ileak(CP)
PFD gain
Rext = 1.8 kΩ; THD = 1%
charge pump leakage current over full charge pump
in off state
voltage range
130
0.25
4.22
50
0.4
−
−
-
−
0.477
−
170
170
0.4
27
−1
−
−
−
70
−
−
−
122.88
13
−
±30
200
200
−
32
−
507
0.75
4.34
90
VCCA − 0.4
tbf
35
-
−
−
−
230
230
VCCA − 0.4
37
+1
UNIT
dB
dB
dB
GHz
MHz
ppm
Hz
dBc/Hz
µA
µA
V
µA/rad
µA
GHz
MHz/V
V
MHz/V
µs
MHz
MHz
ppm
ppm
µA
µA
V
µA/rad
µA
2002 Oct 30
16