MMBD452LT1G 查看數據表（PDF） - ON Semiconductor
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MMBD452LT1G Datasheet PDF : 3 Pages
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MMBD452LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
500
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
TA = 100°C
75°C
25°C
6.0
12
18
24
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
TA = 85°C
TA = −40°C
1.0
TA = 25°C
0.1
30
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
SINUSOIDAL
GENERATOR
IF(PEAK)
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
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