K3306 查看數據表（PDF） - NEC => Renesas Technology

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K3306

MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

10.0±0.3

4.5±0.2

3.2±0.2

2.7±0.2

2SK3306

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

0.7±0.1

2.54

1.3±0.2

1.5±0.2

2.54

2.5±0.1

0.65±0.1

1 23

1. Gate

2. Drain

3. Source

Source

5 Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14004EJ2V0DS00

7

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