2SA1121 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SA1121

Silicon PNP Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SA1121

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–35

V

–35

V

–4

V

–500

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO –35

voltage

Collector to emitter breakdown V(BR)CEO –35

voltage

Emitter to base breakdown

voltage

V(BR)EBO

–4

Collector cutoff current

I CBO

—

Collector to emitter saturation VCE(sat)

—

voltage

DC current transfer ratio

hFE*1

60

hFE

10

Typ

—

—

—

—

–0.2

—

—

Max

—

—

—

–0.5

–0.6

320

—

Base to emitter voltage

VBE

—

–0.64 —

Note: 1. The 2SA1121 is grouped by hFE as follows.

Grade

B

C

D

Mark

SB

SC

SD

hFE

60 to 120 100 to 200 160 to 320

Unit

V

V

V

µA

V

V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

IC = –150 mA, IB = –15 mA

VCE = –3 V, IC = –10 mA

VCE = –3 V, IC = –500 mA

(Pulse test)

VCE = –3 V, IC = –10 mA

See characteristic curves of 2SA673.

2

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