NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
−102
brs, grs
(mS)
−10
−1
−10−1
mcd226
brs
grs
−10−2
10
102
103
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 19. Reverse transfer admittance; typical values.
102
bos, gos
(mS)
10
1
mcd225
bos
10−1
10
gos
102
103
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 20. Output admittance; typical values.
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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