NXP Semiconductors
BAV70 series
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BAV70_SER_7
Modifications:
20071127
Product data sheet
-
BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BAV70M added
• Section 1.1 “General description”: amended
• Table 1 “Product overview”: added
• Table 2 “Quick reference data”: added
• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VRRM maximum
value from 85 V to 100 V
• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VR maximum value
from 75 V to 100 V
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR condition VR from 75 V to 80 V for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of IR maximum value
from 2.5 µA to 0.5 µA for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70T change of IR maximum value from 2.0 µA to 0.5 µA
for Tj = 25 °C
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C
• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of
IR condition VR from 75 V to 80 V for Tj = 150 °C
• Section 8 “Test information”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BAV70_6
20020403
Product specification
-
BAV70_5
BAV70S_2
19971021
Product specification
-
BAV70S_1
BAV70T_3
20040204
Product specification
-
BAV70T_2
BAV70W_6
20020405
Product specification
-
BAV70W_5
BAV70_SER_7
Product data sheet
Rev. 07 — 27 November 2007
© NXP B.V. 2007. All rights reserved.
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