NXP Semiconductors
Low-voltage stabistor
Product data sheet
BAS17
FEATURES
• Low-voltage stabilization
• Forward voltage range: 580 to 960 mV
• Total power dissipation: max. 250 mW.
APPLICATIONS
• Low-voltage stabilization e.g.
– Bias stabilizer in class-B output stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a small SOT23 plastic
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpa2ge
1
2
n.c.
3
1
3
MAM185
MARKING
TYPE NUMBER
BAS17
MARKING CODE(1)
∗A9
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
Fig.1 Simplified outline (SOT23),
pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
Tamb = 25 °C
MIN.
−
−
−
−65
−
MAX.
5
200
250
+150
150
UNIT
V
mA
mW
°C
°C
2003 Mar 25
2