M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
DC and AC parameters
Table 15. DC characteristics (M24256-BF, M24256-DF, device grade 6)
Symbol
Parameter
Test conditions(1) (in addition
to those in Table 8)
Min.
Max. Unit
ILI
Input leakage current
(E1, E2, SCL, SDA)
VIN = VSS or VCC
device in Standby mode
ILO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: VSS or VCC
-
±2
µA
-
±2
µA
ICC Supply current (Read)
VCC = 1.7 V, fc= 400 kHz
fc= 1 MHz(2)
-
0.8
mA
-
2.5
mA
ICC0 Supply current (Write)
ICC1 Standby supply current
VIL
Input low voltage
(SCL, SDA, WC, Ei)(5)
Input high voltage
(SCL, SDA)
VIH Input high voltage
(WC, E2, E1, E0)(6)
During tW 1.7 V < VCC < 2.5 V
Device not selected(4),
VIN = VSS or VCC,
VCC = 1.7 V
1.7 V ≤ VCC < 2.5 V
1.7 V ≤ VCC < 2.5 V
1.7 V ≤ VCC < 2.5 V
-
2(3)
mA
-
1
µA
–0.45 0.25 VCC V
0.75 VCC 6.5
V
0.75 VCC VCC+0.6 V
VOL Output low voltage
IOL = 1 mA, VCC = 1.7 V
-
0.2
V
1.
If the application uses the voltage range F device
please refer to Table 13 instead of this table.
with
2.5
V
<
VCC
<
5.5
V
and
-40
°C
<
TA
<
+85
°C,
2. Only for devices identified by process letter K (see Table 17).
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).
5. Ei inputs should be tied to VSS (see Section 2.3).
6. Ei inputs should be tied to VCC (see Section 2.3).
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