T830-8FP 查看數據表（PDF） - STMicroelectronics
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T830-8FP Datasheet PDF : 9 Pages
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T830-8FP
Characteristics
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current versus
immunity versus junction
junction temperature
temperature (typical values)
(dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C]
7
6
dV/dt [Tj] / dV/dt [Tj=125 °C]
2
(dV/dt) > 5KV/µs
VD=VR=537V
5
4
1
3
2
1
Tj(°C)
0
0
Tj(°C)
25
50
75
100
125
25
50
75
100
125
Figure 13. Relative variation of critical rate of Figure 14. Relative variation of leakage
decrease of main current versus
current versus junction
reapplied dV/dt (typical values)
temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
1.5
1.0
Tj =125 °C
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM[Tj = 125 °C; 800 V]
1.0E+00
1.0E-01
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
1.0E-02
VDRM = VRRM = 400 V
0.5
1.0E-03
0.0
1.0
(dV/dt)c (V/µs)
Tj(°C)
1.0E-04
10.0
100.0
25
50
75
100
125
Doc ID 023366 Rev 1
5/9
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